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STM69 50AC100A R7S21 PMN40L OS81082 AP432I FP75S 2SC25
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  di gital transistors (built-in resistors) dtc114te/dtc114tua DTC114TKA/dtc114tca /dtc114tsa digital transistor (npn) features ? built-in bias resistors enable the configuration of an inverter circuit without connect ing extemal input resistors. ? the bias resistors conisit of thin-film resistors with complete isolation to without connecting extemal input. they also have the advantage of almost completely eliminating parasitic effects. ? only the on/off conditions need to be set for operation, marking device design easy. pin connenctions and marking (1) emitter (2) collector (3) base (1) base (2) emitter (3) collector (1) base (2) emitter (3) collector (1) base (2) emitter (3) collector (1) base (2) emitter (3) collector (1) base (2) emitter (3) collector (1) base (2) emitter (3) collector (1) base (2) emitter (3) collector addreviated symbol: 04 sot-523 addreviated symbol: 04 sot-23-3l sot-23 sot-323 to-92s dtc114te dtc114tua dta114eca dtc114tca DTC114TKA dtc114tsa addreviated symbol: 0 4 addreviated symbol: 0 4 tiger electronic co.,ltd
maximum ratings* t a =25 unless otherwise noted limits(dtc114t ) symbol parameter e ua ka ca sa units v cbo collector-base voltage 50 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current -continuous 100 ma p c collector dissipation 150 200 300 mw tj junction temperature 150 / t j , t stg junction and storage temperature -55~+150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 50 a,i e =0 50 v collector-emitter breakdown voltage v (br)ceo ic= 1 ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e = 50 a,i c =0 5 v collector cut-off current i cbo v cb = 50 v,i e =0 0.5 ua emitter cut-off current i ebo v eb = 4 v,i c =0 0.5 ua dc current gain h fe v ce = 5 v,i c = 1 ma 100 300 600 collector-emitter saturation voltage v ce(sat) i c =10ma,i b =1ma 0.3 v transition frequency f t v ce = 10 v,i e =- 5 ma, f= 100 mhz 250 mhz imput resistor r1 7 10 13 k typical characteristics


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